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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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10x10x0.5mm High Output Gd3Al2Ga3O12 Ce GAGG Single Crystal Substrates

China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
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10x10x0.5mm High Output Gd3Al2Ga3O12 Ce GAGG Single Crystal Substrates

10x10x0.5mm High Output Gd3Al2Ga3O12 Ce GAGG Single Crystal Substrates
10x10x0.5mm High Output Gd3Al2Ga3O12 Ce GAGG Single Crystal Substrates 10x10x0.5mm High Output Gd3Al2Ga3O12 Ce GAGG Single Crystal Substrates

Large Image :  10x10x0.5mm High Output Gd3Al2Ga3O12 Ce GAGG Single Crystal Substrates

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: ISO9001,RoHS,Reach
Model Number: CR210628-01
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: USD 66/pc
Packaging Details: Transparent clean box
Delivery Time: 1-2 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 5000pcs per month
Detailed Product Description
Item: 10x10x0.5mm High Output Ce GAGG Single Crystal Substrates Size: 10x10x0.5mm
Growth Method: Czocharalski Chemical Formular: Gd3Al2Ga3O12
Density: 6.63g/cm3 Application: PET,SPECT,CT..
Polish: 10/5 Max Dia: 60mm
High Light:

GAGG Single Crystal Substrates

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Gd3Al2Ga3O12 Single Crystal Substrates

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Cerium doped GAGG Substrates

10x10x0.5mm High Output Ce GAGG Single Crystal Substrates

 

GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and compton electron detection. Cerium doped GAGG have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 520 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors.

 

Crystro's GAGG wafer is grown by Czochralski method.Max diameter reach 3inch,it's now the biggest size in this filed,we can custom size and specs ,rougness<0.5nm.Magneto-optical single crystals like GGG,SGGG,TGG,TSAG are our main products.

 

GAGG(ce) is a very promising scintillator in high energy industrial field, when it was characterized on life test under 115kv, 3mA and the radiation source located at a 150 mm distance from crystal, after 20 hours the performance is nearly the same as the fresh one. It means it has a good prospect to withstand high dose under X-ray irradiation, of course it depends on irradiation conditions and in case of going further with GAGG for NDT further exact test need to be conducted.

 

 

Features:

 

High density
High light yield
Fast decay time
Chemically inert
High sensitivity
High energy resolution

 

Main Advantages:

 

1. Relatively bright – emitting >50,000 photons/MeV

2. Good absorbers with good stopping powers - density 6.63 g/cm³

3. Broadly emitting with a 540nm peak

4. Good Energy resolution

  • Good absorbers with good stopping powers - density 6.63 g/cm³
  • Robust with good mechanically characteristics

Main Applications:

  • Medical Imaging - PET, PEM, SPECT and CT
  • Specialist applications in high energy, nuclear, space and medical physic

 

10x10x0.5mm High Output Gd3Al2Ga3O12 Ce GAGG Single Crystal Substrates 0

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Tel: +8613335516062

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