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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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9 X 9 X25 Mm LiNbO3 Piezoelectric Effect Crystals For EO Q Switch

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China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
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9 X 9 X25 Mm LiNbO3 Piezoelectric Effect Crystals For EO Q Switch

9 X 9 X25 Mm LiNbO3 	Piezoelectric Effect Crystals For EO Q Switch
9 X 9 X25 Mm LiNbO3 	Piezoelectric Effect Crystals For EO Q Switch 9 X 9 X25 Mm LiNbO3 	Piezoelectric Effect Crystals For EO Q Switch

Large Image :  9 X 9 X25 Mm LiNbO3 Piezoelectric Effect Crystals For EO Q Switch

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS/COC
Model Number: CR210.205-1
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: USD 20~200/pc
Packaging Details: Transparent clean box
Delivery Time: 4-5 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 2000pcs per month
Detailed Product Description
Material: 9 X 9 X25 Mm LiNbO3 Crystal For EO Q Switch Origin: China
Crystal Sturucture: Trigonal, Space Group R3c, Point Group 3m Melting Point: 1253℃
Deliquescence: None Transparency Range: 420-5200nm
Absorption Coefficient: ~0.1%/cm @1064nm Refractive Indices: Ne=2.156, No=2.232@1064nm
High Light:

Q Switch linbo3 crystal

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EO linbo3 crystal

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EO Piezoelectric Effect Crystals

9 X 9 X25 mm LiNbO3 Crystal for EO Q Switch

 

LiNbO3 is also widely used as electro-optic modulators and O-switches for Nd: YAG, Nd: YLF and Ti:Sapphire lasers as well as modulators for fiber optics. The following table list the specifications of a typical LiNbO3 crystal used as Q-switch with transverse E-O modulation. The light propagates in z-axis. The electro-optic coefficients of LiNbO3 are: r33= 32 pm/V, r31= 10 pm/V, r22= 6.8 pm/V at at low frequency and r33= 31 pm/V, r31= 8.6 pm/V, r22= 3.4 pm/V at high electric frequency. The halfwave voltage: Vπ=λd/no3γc1, γc=(ne/no)3γ3313.

 

Both pure LN and MgO doped LN (MgO:LN) crystals with gold coatings on side faces for electrodes are available

 

 

Crystro provides:

  • LiNbO3 wedges used for fiber optical isolators and circulators.
  • Reliable delivery
  • Strict quality control
  • Technical support
  • Very competitive prices

 

Specifications of LN EO components:

 

Wavefront Distortion: Less than λ/8 @ 633 nm
Dimension Tolerance: (W+/-0.1 mm) x (H+/-0.1 mm) x (L+0.5/-0.1 mm)
Clear Aperture: > 90% central area
Flatness: λ/8 @ 633 nm
Surface Quality: Scratch/Dig 10/5 per MIL-O-13830A
Parallelism: better than 20 arc seconds
Perpendicularity: 5 arc minutes
Angle Tolerance: Δθ < 0.5o, Δφ < 0.5o

 

LiNbOQ-switch Specifications:

Size  9 X 9 X25 mm3 or 4 X 4 X 15 mm3
 Other size is available upon request
Tolerance of Size   Z-axis: ± 0.2mm
 X-axis and Y-axis: ± 0.1mm
Chanfer  less than 0.5 mm at 
Accuracy of Orientation  Z-axis: < ±5′,X-axis and Y-axis: < ±10′
Parallelism  <20′′
Finish  10/5 scratch/dig
Flatness  λ/8 at 633nm
AR-Coating  R<0.2% @1064nm
Electrodes  Gold/Chrome plated on X-faces
Wavefront Distortion  <λ/4 @633nm
Extinction Ratio  >400:1 @633nm, φ 6mm beam

 

9 X 9 X25 Mm LiNbO3 	Piezoelectric Effect Crystals For EO Q Switch 0

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