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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
Home ProductsSingle Crystal Substrates

Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished

China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
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Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished

Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished
Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished
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Large Image :  Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CR20200108-8
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: Negotiable
Packaging Details: Carton Package
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 1000pcs/month
Detailed Product Description
Orientation: <100> Type: Round,Square
Diameter: 2"inch , 3"inch, 4''inch Thickness: 0.5mm,1mm
Polishing: Double Side Polished Surface Finish: < 10A
Material: Laalo3 Shape: Wafer
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single crystal elements

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laalo3 substrate

Round <100> LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase

 

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability

 

Main Properties:

 

  Typical Physical Properties
Crystal Structure Cubic a=3.79 Angstroms
Growth Method Czochralski
Density 6.52 g/cm3
Melt Point 2080 oC
Thermal expansion 10 (x10-6/ oC)
Dielectric Constant ~ 25
Loss Tangent at 10 GHz ~3x10-4 @ 300K , ~0.6 x10-4 @77K
Color and Appearance Transparent to Brown based on annealing condition. Visible twins on polished substrate
Chemical Stability Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: roy_luo

Tel: +8613335516062

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