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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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Substituted GGG SGGG EPI 1SP Single Crystal Substrates

China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
Fast Delivery and Quality looks good,will test soon.Thanks!

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Substituted GGG SGGG EPI 1SP Single Crystal Substrates

Substituted GGG SGGG EPI 1SP Single Crystal Substrates
Substituted GGG SGGG EPI 1SP Single Crystal Substrates
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Large Image :  Substituted GGG SGGG EPI 1SP Single Crystal Substrates

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS/ROHS
Model Number: CR210127-02
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Packaging Details: Transparent clean box
Delivery Time: 4-5weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 5000pcs per month
Detailed Product Description
Material: Substituted GGG (SGGG) EPI 1sp Single Crystal Substrates Diameter: 3inch,4inch
Orientation: (100), (111) Lattice Constant: 12.497A
Density: 7.09g/cm3 Place Of Origin: Anhui, China
Warranty:: 1 Year After-sales Service: Video Technical Support, Online Support
High Light:

1sp Single Crystal Substrates

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EPI Single Crystal Substrates

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Substituted ggg substrates

Substituted GGG (SGGG) EPI 1sp Single Crystal Substrates

 

SGGG single crystal, (substituted gadolinium gallium garnet) is grown by Czochralski method .
SGGG crystals with calcium, magnesium and zirconium as substituting ions, which are used as the substrates for the growth of bismuth-substituted iron garnet epitaxial films, which is good material for YIG,and BIG flim.
Substituted Gadolinium Gallium Garnet (SGGG) is used as substrates for liquid epitaxy. The lattice parameter of our crystals is well controlled and the surface polish finishing is of the highest quality, allowing a perfect epitaxy.

SGGG is used as substrates for liquid epitaxy.It's dedicated substrates for magneto-optical film. 

Anhui Crystro participate in the kinds exhibitions every year: Laser World of Photonics Munich, Shanghai, Photonics West in San Francisco, CIOE in Shenzhen, etc.
 
 
Crystal properties
Crystal growth method Czochralski
Crystal growth orientation (100), (111)
Maximum size 3 inch diameter
Variations Dopands on request
Crystallographic properties
Crystallographic structure Cubic
a = 12.383 Å
a = 12.505 Å SGGG
Mineralogical Garnet
Twinning structure Perfect
Colour Colourless / Brownish SGGG
Physical properties
Density 7.09 g/cm3
Melting point 1730 °C
Hardness 7.5 (Mohs)
Dielectric constant 30
Dielectric loss tangent (10 GHz) ca. 3.0 * 10_4
Optical properties
Transmission range 0.3 to 7.0 mm
Refraction index: nd = 1.9708 at 577 nm

 

Compare GGG with SGGG:

 

Material GGG SGGG
Chemical Formular Gd3Ga5O12 Substituted GGG
Lattice Constant 12.383A 12.497A
Growth Method Czochralski Czochralski
Density 7.13g/cm3 7.09g/cm3
Mohs Hardness 8 7.5
Melting Point 1725℃ 1730℃
Refractive Index 1.954 at 1064nm 1.954 at 1064nm

 

 

Substituted GGG SGGG EPI 1SP Single Crystal Substrates 0

 

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Contact Person: roy_luo

Tel: +8613335516062

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