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Home ProductsLaAlO3 Wafer

3inch 0.5mm LaAlO3 Lanthanum Aluminate Single Crystals Insoluble

China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
Fast Delivery and Quality looks good,will test soon.Thanks!

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3inch 0.5mm LaAlO3 Lanthanum Aluminate Single Crystals Insoluble

3inch 0.5mm LaAlO3 Lanthanum Aluminate Single Crystals Insoluble
3inch 0.5mm LaAlO3 Lanthanum Aluminate Single Crystals Insoluble 3inch 0.5mm LaAlO3 Lanthanum Aluminate Single Crystals Insoluble

Large Image :  3inch 0.5mm LaAlO3 Lanthanum Aluminate Single Crystals Insoluble

Product Details:

Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CR210122-3

Payment & Shipping Terms:

Minimum Order Quantity: 1pc
Price: Negotiable
Packaging Details: 1000 clean room, 100 clean bag or single box packaging
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 1000pcs/month
Detailed Product Description
Material: 3inch Diameter Laalo3 Wafer Size: 3inchx0.5mm,3inchx0.6mm
Melt Point(℃): 2080 ℃ Surface Finish: < 10A
Orientation: <100>,<111> Redirection Precision: ±0.2°
Density: 6.52(g/cm3) Type: Flats
High Light:

3 inch LaAlO3 single crystals

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0.5mm LaAlO3 single crystals

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3 inch Lanthanum Aluminate single crystals

3inch diameter Laalo3 wafer

 

Lanthanum aluminate (LaAlO3) substrate single crystal is the most important industrialized, large-size high-temperature
superconducting thin film single crystal substrate material. It is grown by Czochralski method, we can get two inches in diameter and larger single crystals and the substrate. It works with high-temperature superconducting materials lattice well matched, such as YBaCuO. Lower dielectric constant, low loss microwave, and thus suitable for production of high-temperature superconducting microwave electronic devices (such as high-temperature superconducting microwave filters in the remote communications.). Has great practical and potential applications.

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

 

Major Parameters
Crystal structure M6(normal temperature) M3(>435℃)
Unit cell constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melt point() 2080 
Density 6.52(g/cm3)
Hardness 6-6.5(mohs)
Thermal expansion 9.4x10-6/℃
Dielectric constants ε=21
Secant loss(10ghz) ~3×10-4@300k,~0.6×10-4@77k
Color and appearance To anneal and conditions differ from brown to brownish
Chemical stability Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
Characteristics For microwave electron device
Growth method Czochralski method
Size Size upon request, the biggest diameter 3 inches
Ф15Ф20Ф1″Ф2″, Ф2.6″Ф3
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation <100> <110> <111>
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack

1000 clean room, 100 clean bag or single box packaging

 

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: roy_luo

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