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|Material:||Langasite||Wavelength:||Up To 32um|
|Transmitted Wave Front Distortion:||<1/4||Damage Threshold:||>900MW/cm2(@1064nm,10ns)|
Langasite Pockel Cell Q Switch,
32um Pockel Cell Q Switch,
LGS Based Q Switch
LGS Series Electro-optic (EO) Q-switch Pockels Cell
A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.
The LGS electro-optic Q switch passes light along the Z direction of the crystal and applies an electric field along the X direction, which can make full use of the lateral electro-optic effect of the crystal to realize the Q-switch function of the LGS crystal. The electro-optic Q-switch made by LGS is actually a new kind of rotation-electro-optical Q-switch.
|Crystal Structure||Trigonal; a＝b＝7.453Å,c＝6.293Å|
|Melting Point||1470 °C|
|Transparency Range||242 - 3200 nm|
|Electro-Optic Coefficients||γ41＝1.8 pm/V, γ11＝2.3 pm/V|
|Thermal Expansion Coefficients||α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)|
Contact Person: roy_luo