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Pockels Cell Q Switch
Created with Pixso. Electro Optic 32um Langasite Pockel Cell Q Switch

Electro Optic 32um Langasite Pockel Cell Q Switch

Brand Name: CRYSTRO
Model Number: CR200820-04
MOQ: 1pc
Delivery Time: 4-5 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
CHINA
Certification:
SGS/ROHS
Material:
Langasite
Wavelength:
Up To 32um
Transmitted Wave Front Distortion:
<1/4
Damage Threshold:
>900MW/cm2(@1064nm,10ns)
Highlight:

Langasite Pockel Cell Q Switch

,

32um Pockel Cell Q Switch

,

LGS Based Q Switch

Product Description

LGS Series Electro-optic (EO) Q-switch Pockels Cell

 

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

 

The LGS electro-optic Q switch passes light along the Z direction of the crystal and applies an electric field along the X direction, which can make full use of the lateral electro-optic effect of the crystal to realize the Q-switch function of the LGS crystal. The electro-optic Q-switch made by LGS is actually a new kind of rotation-electro-optical Q-switch.

 

 

Basic Properties:

Chemical Formula  La3Ga5SiQ14
Crystal Structure  Trigonal; a=b=7.453Å,c=6.293Å
Density  5.75 g/cm3
Melting Point  1470 °C
Transparency Range  242 - 3200 nm
Refractive Index  1.89
Electro-Optic Coefficients  γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity  1.7×1010 Ω·cm
Deliquescence  No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

 

Features:

  • LGS -based Q-switch (Pockels cell);
  • For wavelengths up to 3.2μm;
  • Transmitted Wave Front Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.
Good price  online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Pockels Cell Q Switch
Created with Pixso. Electro Optic 32um Langasite Pockel Cell Q Switch

Electro Optic 32um Langasite Pockel Cell Q Switch

Brand Name: CRYSTRO
Model Number: CR200820-04
MOQ: 1pc
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
CHINA
Brand Name:
CRYSTRO
Certification:
SGS/ROHS
Model Number:
CR200820-04
Material:
Langasite
Wavelength:
Up To 32um
Transmitted Wave Front Distortion:
<1/4
Damage Threshold:
>900MW/cm2(@1064nm,10ns)
Minimum Order Quantity:
1pc
Delivery Time:
4-5 weeks
Payment Terms:
T/T, Western Union, MoneyGram, Paypal
Highlight:

Langasite Pockel Cell Q Switch

,

32um Pockel Cell Q Switch

,

LGS Based Q Switch

Product Description

LGS Series Electro-optic (EO) Q-switch Pockels Cell

 

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

 

The LGS electro-optic Q switch passes light along the Z direction of the crystal and applies an electric field along the X direction, which can make full use of the lateral electro-optic effect of the crystal to realize the Q-switch function of the LGS crystal. The electro-optic Q-switch made by LGS is actually a new kind of rotation-electro-optical Q-switch.

 

 

Basic Properties:

Chemical Formula  La3Ga5SiQ14
Crystal Structure  Trigonal; a=b=7.453Å,c=6.293Å
Density  5.75 g/cm3
Melting Point  1470 °C
Transparency Range  242 - 3200 nm
Refractive Index  1.89
Electro-Optic Coefficients  γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity  1.7×1010 Ω·cm
Deliquescence  No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

 

Features:

  • LGS -based Q-switch (Pockels cell);
  • For wavelengths up to 3.2μm;
  • Transmitted Wave Front Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.