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|Material:||High Power BBO Pockels Cells||Type:||Q-Switch|
|PC Size:||Diameter 20mm X 35mm||Crystal Size:||2.5 X 2.5 X 25mm|
|Crystal Quatity:||Single Crystal BBO||COATINGS::||AR/AR @ 1064nm|
SGS BBO Pockels Cells,
Single Crystal BBO Pockels Cells,
UV Transmission bbo pockels cell
High Power BBO Pockels Cells
BBO is one of the electro-optic material choices for high average power E-O Q Switch applications. BBO has significant advantages over other materials in terms of laser power handling abilities, temperature stability, and substantial freedom from piezoelectric ringing. Because it relies on the electro optic effect, switching time - aided by the low capacitance of the E-O Q Switch is very fast. The wide transparency range of BBO allows it to be used in diverse applications.
E-O Q Switch of EOQ series are transverse field devices. Low electro-optical coefficient of BBO results in high operating voltages. The quarter-wave voltage is proportional to the ratio of electrode spacing and crystal length. As a result, a smaller aperture device has lower quarter-wave voltage. However, even for 3mm aperture devices quarter-wave voltage is as high as 3.4KV@1064nm. Double crystal design is employed in order to reduce required voltages and allowing operation in half-wave mode with fast switching times.
As a result of its excellent properties BBO crystal has a number of advantages for different applications, like NOPA with femtosecond ( fs ) pulses, harmonics generation (up to fifth) of Nd:YAG and Nd:YLF lasers, frequency doubling or tripling of femtosecond Ti:Sapphire and dye lasers, OPO at Type I and Type II phase-matching, EO modulation, EO switching for Pockels cells and many other kinds of applications.
· High Repetition Rate
· High peak power damage resistance
· Low absorption
· UV Transmission
· Low Acoustic Noise
|Quarter-Wave Voltage@ 1064 nm||3.4KV|
|Damage Threshold||> 500 MW / cm2 @1064nm, 10ns|
|Wavefront Distortion@ 1064 nm||< λ/8|
|Typical Capacitance||< 3pf|
|Outline dimension, mm||φ25.4×44|
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