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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
Home ProductsLaAlO3 Wafer

High Temperature Superconducting LaAlO3 Single Crystal Substrate

China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
Fast Delivery and Quality looks good,will test soon.Thanks!

—— Jhon Klus

A stable supplier of us,very professional team..

—— Clain

Crystro is a long-term supplier of us,we're happy to coopertate with a supplier with a good capacity and good quality,the quality is very important for us.

—— Jarmila

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High Temperature Superconducting LaAlO3 Single Crystal Substrate

High Temperature Superconducting LaAlO3 Single Crystal Substrate
High Temperature Superconducting LaAlO3 Single Crystal Substrate
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Large Image :  High Temperature Superconducting LaAlO3 Single Crystal Substrate

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CR210123-1
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: Negotiable
Packaging Details: Carton Package
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 1000pcs/month
Detailed Product Description
Material: Laalo3/lao Type: Round Wafer
Diameter: 2"inch , 3"inch, 4''inch Ra: <5A(5umx5um)
Polishing: Double Side Polished Surface Finish: < 10A
Pack: 1000 Level Clean Bag/transparent Box
High Light:

Superconducting Single Crystal Substrate

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LaAlO3 Single Crystal Substrate

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Superconducting laalo3 wafer

High Temperature Superconducting Single Crystal Substrate Laalo3

 

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

Crystro has a professional team with more than 15 years of production experience,we invests heavily in crystal R&D every year to improve products performance and develope new crystals.

LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

 

 

Main Properties:

 

  Typical Physical Properties
Crystal Structure Cubic a=3.79 Angstroms
Growth Method Czochralski
Density 6.52 g/cm3
Melt Point 2080 oC
Thermal expansion 10 (x10-6oC)
Dielectric Constant ~ 25
Loss Tangent at 10 GHz ~3x10-4 @ 300K , ~0.6 x10-4 @77K
Color and Appearance Transparent to Brown based on annealing condition. Visible twins on polished substrate
Chemical Stability

Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC

 

Applications:

 

High Temperature Superconducting thin films

Giant magnetic thin films

Electronic devices,

high temperature fuel cell

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: roy_luo

Tel: +8613335516062

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