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Electro Optic 32um Langasite Pockel Cell Q Switch

China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
Fast Delivery and Quality looks good,will test soon.Thanks!

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A stable supplier of us,very professional team..

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Electro Optic 32um Langasite Pockel Cell Q Switch

Electro Optic 32um Langasite Pockel Cell Q Switch
Electro Optic 32um Langasite Pockel Cell Q Switch Electro Optic 32um Langasite Pockel Cell Q Switch Electro Optic 32um Langasite Pockel Cell Q Switch

Large Image :  Electro Optic 32um Langasite Pockel Cell Q Switch

Product Details:

Place of Origin: CHINA
Brand Name: CRYSTRO
Certification: SGS/ROHS
Model Number: CR200820-04

Payment & Shipping Terms:

Minimum Order Quantity: 1pc
Delivery Time: 4-5 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detailed Product Description
Material: Langasite Wavelength: Up To 32um
Transmitted Wave Front Distortion: <1/4 Damage Threshold: >900MW/cm2(@1064nm,10ns)
High Light:

Langasite Pockel Cell Q Switch

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32um Pockel Cell Q Switch

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LGS Based Q Switch

LGS Series Electro-optic (EO) Q-switch Pockels Cell

 

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

 

The LGS electro-optic Q switch passes light along the Z direction of the crystal and applies an electric field along the X direction, which can make full use of the lateral electro-optic effect of the crystal to realize the Q-switch function of the LGS crystal. The electro-optic Q-switch made by LGS is actually a new kind of rotation-electro-optical Q-switch.

 

 

Basic Properties:

Chemical Formula  La3Ga5SiQ14
Crystal Structure  Trigonal; a=b=7.453Å,c=6.293Å
Density  5.75 g/cm3
Melting Point  1470 °C
Transparency Range  242 - 3200 nm
Refractive Index  1.89
Electro-Optic Coefficients  γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity  1.7×1010 Ω·cm
Deliquescence  No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

 

Features:

  • LGS -based Q-switch (Pockels cell);
  • For wavelengths up to 3.2μm;
  • Transmitted Wave Front Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: roy_luo

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