Brief: Discover the Round LaAlO3 Wafer Optical Substrate, a high-pressure experimental phase double side polished substrate ideal for high-temperature superconducting thin films and microwave applications. Perfect for electronic devices, catalysis, and more.
Related Product Features:
High temperature superconducting single crystal substrate for epitaxial growth.
Excellent lattice match to perovskite structure materials.
Low dielectric loss suitable for microwave and dielectric resonance applications.
Small thermal expansion coefficient ensures stability under varying temperatures.
Good chemical stability, insoluble in mineral acids at 25°C.
Transparent to brown appearance with visible twins on polished substrate.
Wide energy gap and large specific surface area for enhanced performance.
Good thermal stability, melting point at 2080°C.
Faqs:
What are the main applications of the Round LaAlO3 Wafer Optical Substrate?
It is used in electronic devices, catalysis, high-temperature fuel cells, ceramics, sewage treatment, and as a substrate material for epitaxial growth of high-temperature superconducting thin films.
What are the advantages of using LaAlO3 as a substrate material?
LaAlO3 offers small dielectric constant, low dielectric loss, good lattice matching, small thermal expansion coefficient, good chemical stability, wide energy gap, large specific surface area, and good thermal stability.
How does the LaAlO3 substrate perform under high temperatures?
LaAlO3 has a high melting point of 2080°C and good thermal stability, making it suitable for high-temperature applications such as fuel cells and electronic devices.