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| Material: | Ce Dooped Gadolinium Aluminium Gallium Garnet | Atomic Number: | 54.4 |
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| Growth Method: | Czochralski | Diameter: | >60mm |
| Size Tolerance: | ±0.05mm | Polish: | S/D 10/5 |
| Parallel: | 10'' | Perpendicular: | 5’ |
| High Light: | gagg crystals,ce crystal,Ce Doped GAGG Single Crystal |
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Ce Doped Gadolinium Aluminium Gallium Garnet (Ce:GAGG) Crystal
GAGG(Ce) - Gadolinium Aluminium Gallium Garnet (Gd₃Al₂Ga₃O₁₂), doped with Ce is a newly developed scintillator. It is one of the brightest available scintillators with an emission peak at 520nm. GAGG(Ce) has good stopping power, is physically rugged and and well suited to a broad range of applications.
Main Advantages:
Main Applications:
Main Properties:
| Chemical Formula | Gd₃Al₂Ga₃O₁₂ |
| Atomic Number (Effective) | 54.4 |
| Growth Method | Czochralski |
| Density | 6.63g/cm3 |
| Mohs Hardness | 8 |
| Melting Point | 1850℃ |
| Thermal Expansion Coeff. | TBA x 10‾⁶ |
Contact Person: Ms. Wu
Tel: 86-18405657612
Fax: 86-0551-63840588
