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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
Home ProductsLaAlO3 Wafer

Alumina Thin Flim LaAlO3 Substrates

China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
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Alumina Thin Flim LaAlO3 Substrates

Alumina Thin Flim LaAlO3 Substrates
Alumina Thin Flim LaAlO3 Substrates Alumina Thin Flim LaAlO3 Substrates Alumina Thin Flim LaAlO3 Substrates

Large Image :  Alumina Thin Flim LaAlO3 Substrates

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CR210122-04
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: Negotiable
Packaging Details: Carton Package
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 1000pcs/month
Detailed Product Description
Material: Alumina Thin Flim LaAlO3 Substrates Diameter: Max Dia 76.2mm
Thickness: 0.5mm,1mm,0.6mm Ra: < 5A(5umx5um)
Orientation: <100>,<111> Polishing: Double Side Polished
Hardness: 6-6.5(mohs) Type: Square
High Light:

lanthanum aluminate

,

laalo3 substrate

Alumina Thin Flim LaAlO3 Substrates

 

Lanthanum aluminate is an inorganic compound with the formula LaAlO3, often abbreviated as LAO. It is an optically transparent ceramic oxide with a distorted perovskite structure.

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability

 

Main Properties:

 

Major Parameters
Crystal structure M6(normal temperature) M3(>435℃)
Unit cell constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melt point() 2080
Density 6.52(g/cm3)
Hardness 6-6.5(mohs)
Thermal expansion 9.4x10-6/℃
Dielectric constants ε=21
Secant loss(10ghz) ~3×10-4@300k,~0.6×10-4@77k
Color and appearance To anneal and conditions differ from brown to brownish
Chemical stability Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
Characteristics For microwave electron device
Growth method Czochralski method
Size Size upon request, the biggest diameter 3 inches
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation <100> <110> <111>
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack

Class 100 clean bag,class 1000 clean bag

 

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

 

Our Company:

 

Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Ms. Wu

Tel: 86-18405657612

Fax: 86-0551-63840588

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