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LaAlO3 Wafer
Created with Pixso. 6.52g/Cm3 Round thin film LaAlO3 Wafer Crystals Double Side Polished

6.52g/Cm3 Round thin film LaAlO3 Wafer Crystals Double Side Polished

Brand Name: Crystro
Model Number: CR210122-01
MOQ: 1pc
Price: Negotiable
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Certification:
SGS
Material:
Customizable Single Crystal Laalo Substrates
Orientation:
<100>,<111>,<110>
Redirection Precision:
±0.2°
Ra:
< 5A
Thermal Expansion:
9.4x10-6/℃
Polishing:
Double Side Polished
Dielectric Constants:
ε=21
Type:
Round,Square,Flats
Packaging Details:
Carton Package
Supply Ability:
1000pcs/month
Highlight:

6.52g/Cm3 LaAlO3 Wafer

,

Round LaAlO3 Wafer

,

6.52g/Cm3 LaAlO3 crystals

Product Description

 

Main Properties:

 

Major Parameters
Crystal structure M6(normal temperature) M3(>435℃)
Unit cell constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melt point() 2080
Density 6.52(g/cm3)
Hardness 6-6.5(mohs)
Thermal expansion 9.4x10-6/℃
Dielectric constants ε=21
Secant loss(10ghz) ~3×10-4@300k,~0.6×10-4@77k
Color and appearance To anneal and conditions differ from brown to brownish
Chemical stability Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
Characteristics For microwave electron device
Growth method Czochralski method
Size Size upon request, the biggest diameter 3 inches
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation <100> <110> <111>
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack

Class 100 clean bag,class 1000 clean bag

 

 

 

Customizable Single Crystal Laalo Substrates

 

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.

 

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability

Good price  online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
LaAlO3 Wafer
Created with Pixso. 6.52g/Cm3 Round thin film LaAlO3 Wafer Crystals Double Side Polished

6.52g/Cm3 Round thin film LaAlO3 Wafer Crystals Double Side Polished

Brand Name: Crystro
Model Number: CR210122-01
MOQ: 1pc
Price: Negotiable
Packaging Details: Carton Package
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Brand Name:
Crystro
Certification:
SGS
Model Number:
CR210122-01
Material:
Customizable Single Crystal Laalo Substrates
Orientation:
<100>,<111>,<110>
Redirection Precision:
±0.2°
Ra:
< 5A
Thermal Expansion:
9.4x10-6/℃
Polishing:
Double Side Polished
Dielectric Constants:
ε=21
Type:
Round,Square,Flats
Minimum Order Quantity:
1pc
Price:
Negotiable
Packaging Details:
Carton Package
Delivery Time:
3-4 weeks
Payment Terms:
T/T, Western Union, MoneyGram, Paypal
Supply Ability:
1000pcs/month
Highlight:

6.52g/Cm3 LaAlO3 Wafer

,

Round LaAlO3 Wafer

,

6.52g/Cm3 LaAlO3 crystals

Product Description

 

Main Properties:

 

Major Parameters
Crystal structure M6(normal temperature) M3(>435℃)
Unit cell constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melt point() 2080
Density 6.52(g/cm3)
Hardness 6-6.5(mohs)
Thermal expansion 9.4x10-6/℃
Dielectric constants ε=21
Secant loss(10ghz) ~3×10-4@300k,~0.6×10-4@77k
Color and appearance To anneal and conditions differ from brown to brownish
Chemical stability Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
Characteristics For microwave electron device
Growth method Czochralski method
Size Size upon request, the biggest diameter 3 inches
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation <100> <110> <111>
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack

Class 100 clean bag,class 1000 clean bag

 

 

 

Customizable Single Crystal Laalo Substrates

 

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.

 

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability