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LaAlO3 Wafer
Created with Pixso. SGS 1sp LaAlO3 Lanthanum Aluminum Oxide Substrate Low Loss Microwave

SGS 1sp LaAlO3 Lanthanum Aluminum Oxide Substrate Low Loss Microwave

Brand Name: Crystro
Model Number: CR210122-04
MOQ: 1pc
Price: Negotiable
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Certification:
SGS
Material:
Lanthanum Aluminum Oxide Substrate (LaAlO3)
Orientation:
<111>,<110>
Redirection Precision:
±0.2°
Ra:
< 5A
Surface Polish:
1sp,2sp
Dielectric Constants:
ε=21
Clolor:
Transparent To Brown
Dielectric Constant:
~25
Packaging Details:
Carton Package
Supply Ability:
1000pcs/month
Highlight:

1sp Lanthanum Aluminum Oxide Substrate

,

1sp LaAlO3 Substrate

,

SGS LaAlO3 Substrate

Product Description

Lanthanum Aluminum Oxide Substrate (LaAlO3)

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability.

 

Main Properties:

 

Major Parameters
Crystal structure M6(normal temperature) M3(>435℃)
Unit cell constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melt point() 2080
Density 6.52(g/cm3)
Hardness 6-6.5(mohs)
Thermal expansion 9.4x10-6/℃
Dielectric constants ε=21
Secant loss(10ghz) ~3×10-4@300k,~0.6×10-4@77k
Color and appearance To anneal and conditions differ from brown to brownish
Chemical stability Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
Characteristics For microwave electron device
Growth method Czochralski method
Size Size upon request, the biggest diameter 3 inches
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation <100> <110> <111>
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack

Class 100 clean bag,class 1000 clean bag

 

 

Our Company:

 

Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.

 

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

 

Good price  online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
LaAlO3 Wafer
Created with Pixso. SGS 1sp LaAlO3 Lanthanum Aluminum Oxide Substrate Low Loss Microwave

SGS 1sp LaAlO3 Lanthanum Aluminum Oxide Substrate Low Loss Microwave

Brand Name: Crystro
Model Number: CR210122-04
MOQ: 1pc
Price: Negotiable
Packaging Details: Carton Package
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Brand Name:
Crystro
Certification:
SGS
Model Number:
CR210122-04
Material:
Lanthanum Aluminum Oxide Substrate (LaAlO3)
Orientation:
<111>,<110>
Redirection Precision:
±0.2°
Ra:
< 5A
Surface Polish:
1sp,2sp
Dielectric Constants:
ε=21
Clolor:
Transparent To Brown
Dielectric Constant:
~25
Minimum Order Quantity:
1pc
Price:
Negotiable
Packaging Details:
Carton Package
Delivery Time:
3-4 weeks
Payment Terms:
T/T, Western Union, MoneyGram, Paypal
Supply Ability:
1000pcs/month
Highlight:

1sp Lanthanum Aluminum Oxide Substrate

,

1sp LaAlO3 Substrate

,

SGS LaAlO3 Substrate

Product Description

Lanthanum Aluminum Oxide Substrate (LaAlO3)

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability.

 

Main Properties:

 

Major Parameters
Crystal structure M6(normal temperature) M3(>435℃)
Unit cell constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melt point() 2080
Density 6.52(g/cm3)
Hardness 6-6.5(mohs)
Thermal expansion 9.4x10-6/℃
Dielectric constants ε=21
Secant loss(10ghz) ~3×10-4@300k,~0.6×10-4@77k
Color and appearance To anneal and conditions differ from brown to brownish
Chemical stability Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
Characteristics For microwave electron device
Growth method Czochralski method
Size Size upon request, the biggest diameter 3 inches
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation <100> <110> <111>
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack

Class 100 clean bag,class 1000 clean bag

 

 

Our Company:

 

Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.

 

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials