|
Product Details:
Payment & Shipping Terms:
|
| Material: | SGGG | Flatness: | <1/10 Wave At 633nm |
|---|---|---|---|
| Name: | Subsituted Gadolinium Gallium Garnet SGGG | Crystal Growth Method: | Czochralski |
| Orientation: | (100), (111) +/-0.5° | Size: | 10 Mm X 10 Mm X 0.5 Mm |
| Diameter Tolerance: | ±0.05mm | Length Tolerance: | ±0.2mm |
| High Light: | YIG SGGG Substrate,Subsituted Gadolinium Gallium Garnet,YIG SGGG Substrates Wafer |
||
YIG SGGG Substrates Wafer
SGGG single crystal, substituted gadolinium gallium garnet is grown by Czochralski method .
SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films,is good material for YIG,BiYIG,GdBIG.
Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.
Properties:
| Crystal properties | ||
| Crystal growth method | Czochralski | |
| Crystal growth orientation | (100), (111) | |
| Maximum size | 3 inch diameter | |
| Variations | Dopands on request | |
| Crystallographic properties | ||
| Crystallographic structure | Cubic | |
| a = 12.383 Å | ||
| a = 12.505 Å SGGG | ||
| Mineralogical | Garnet | |
| Twinning structure | Perfect | |
| Colour | Colourless / Brownish SGGG | |
| Physical properties | ||
| Density | 7.09 g/cm3 | |
| Melting point | 1730 °C | |
| Hardness | 7.5 (Mohs) | |
| Dielectric constant | 30 | |
| Dielectric loss tangent (10 GHz) | ca. 3.0 * 10_4 | |
| Optical properties | ||
| Transmission range | 0.3 to 7.0 mm | |
| Refraction index: | nd = 1.9708 at 577 nm | |
CRYSTRO supply GGG crystal with:
| Orientation | <111> <100> within ±15 arc min |
| Wave Front Distortion | <1/4 wave@632 |
| Diameter Tolerance | ±0.05mm |
| Length Tolerance | ±0.2mm |
| Chamfer | 0.10mm@45º |
| Flatness | <1/10 wave at 633nm |
| Parallelism | < 30 arc Seconds |
| Perpendicularity | < 15 arc min |
| Surface Quality | 10/5 Scratch/Dig |
| Clear Apereture | >90% |
| Large Dimensions of Crystals | 2.8-76 mm in diameter |
Application:
Substitute GGG
YIG,BIG epitaxy film;
Microwave devices;
Contact Person: jane_wu
Tel: +8613335516062
