Gadolinium Gallium Garnet single crystal substrate
,
EPI-grade polished substrate for optical modules
Product Description
4-inch SGGG Large-Size Substrate, Gadolinium Gallium Garnet Single Crystal, (111) EPI-Grade Polished, Faraday Rotator for 1.6T/CPO Optical Modules, High-Capacity Magneto-Optical Film Epitaxy
The 4-inch SGGG large-size substrate is a high-end specification for next-generation high-speed optical communications (1.6T/CPO) and large-scale production lines. With a diameter of 101.6 mm and standard thickness of 800 ± 30 μm (or custom), it is based on large-size single crystal growth technology. Full-wafer lattice constant uniformity ≤ 0.003 Å, dislocation density ≤ 10 cm⁻², and effective area ≥ 80%. Rotator chip output per wafer increases approximately 75% compared to 3-inch, significantly reducing per-chip cost.
Large-size SGGG crystal growth is technically demanding, requiring strict thermal field control, raw material purity, and annealing processes. Through optimized Czochralski growth and multi-step annealing, this product achieves low-stress, low-absorption, high-uniformity crystal quality. Combined with primary/secondary flats and EPI-grade super-smooth polishing, it meets the large-size mass production requirements of high-end magneto-optical film epitaxy equipment.
Key Functions
High-capacity substrate for 1.6T/CPO era:
4-inch large size adapts to next-gen high-speed module rotator mass production, more chips per wafer
Lower per-chip cost:
~75% larger effective area than 3-inch, dilutes epitaxy, dicing, and inspection costs
High-end magneto-optical film epitaxy:
High lattice uniformity ensures large-area BIG film thickness and magneto-optical performance consistency
Gadolinium Gallium Garnet single crystal substrate
,
EPI-grade polished substrate for optical modules
Product Description
4-inch SGGG Large-Size Substrate, Gadolinium Gallium Garnet Single Crystal, (111) EPI-Grade Polished, Faraday Rotator for 1.6T/CPO Optical Modules, High-Capacity Magneto-Optical Film Epitaxy
The 4-inch SGGG large-size substrate is a high-end specification for next-generation high-speed optical communications (1.6T/CPO) and large-scale production lines. With a diameter of 101.6 mm and standard thickness of 800 ± 30 μm (or custom), it is based on large-size single crystal growth technology. Full-wafer lattice constant uniformity ≤ 0.003 Å, dislocation density ≤ 10 cm⁻², and effective area ≥ 80%. Rotator chip output per wafer increases approximately 75% compared to 3-inch, significantly reducing per-chip cost.
Large-size SGGG crystal growth is technically demanding, requiring strict thermal field control, raw material purity, and annealing processes. Through optimized Czochralski growth and multi-step annealing, this product achieves low-stress, low-absorption, high-uniformity crystal quality. Combined with primary/secondary flats and EPI-grade super-smooth polishing, it meets the large-size mass production requirements of high-end magneto-optical film epitaxy equipment.
Key Functions
High-capacity substrate for 1.6T/CPO era:
4-inch large size adapts to next-gen high-speed module rotator mass production, more chips per wafer
Lower per-chip cost:
~75% larger effective area than 3-inch, dilutes epitaxy, dicing, and inspection costs
High-end magneto-optical film epitaxy:
High lattice uniformity ensures large-area BIG film thickness and magneto-optical performance consistency