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Single Crystal Substrates
Created with Pixso. LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

Brand Name: Crystro
Model Number: SCR-2026-27-01
Delivery Time: 5-6weeks
Payment Terms: T/T, Western Union,MoneyGram,Paypal
Detail Information
Place of Origin:
China
Molecular Formula:
LaAlO3
Growth Method:
Czochralski
Cystal Structure:
Hexagonal Crystal System
Lattice Constant:
A=5.357A C=13.22 A
Mohs Hardness:
6.5
Density:
6.52g/cm3
Melting Point:
2080°C
Dielectric Constant:
ε=21
Coefficient Of Thermalexpansion:
10x10-6/K
TanS Loss:
~3x10-4@300K,~0.6x10-4@77K
Highlight:

LaAlO3 single crystal substrate

,

Lanthanum aluminate substrate for superconductors

,

High-temperature superconducting thin film substrate

Product Description

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

 

Lanthanum aluminum oxide (LaAlO3) is a high-temperature superconducting single-crystal substrate material. It is an excellent substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its superior dielectric properties make it suitable for the fabrication of low-loss microwave amplifiers and dielectric resonant devices.

Size Φ76.2mm
Thickness 0.5mm or customer customization
Polishing Double or single throwing
Crystal optics <100>,<110>,<111>
Surface Roughness Ra Ra≤1nm
Crystalline precision ±0.2°
Positioning edge accuracy 2° (customizable within 1°)

Lanthanum aluminate (LaAlO3) single crystal is a kind of industrial, large-size HTS thin film substrate single crystal material. LaAlO3 crystal matches well with many kinds of perovskite structure materials, and is the substrate material for epitaxial growth of high temperature superconducting films and giant magnetoresistance films. At the same time, lanthanum aluminum crystals have a low dielectric constant and good microwave dielectric performance, so they are suitable for low-loss microwave amplifier devices and dielectric resonance applications.

 

Main characteristics:

Low dielectric loss

The lattice matches well

Small coefficient of thermal expansion

Good chemical stability

Good thermal stability

Typical applications:

High-temperature superconducting thin film extension substrate

Giant magnetic film outer lining

Microwave amplification and dielectric resonance

Good price  online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Single Crystal Substrates
Created with Pixso. LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

Brand Name: Crystro
Model Number: SCR-2026-27-01
Payment Terms: T/T, Western Union,MoneyGram,Paypal
Detail Information
Place of Origin:
China
Brand Name:
Crystro
Model Number:
SCR-2026-27-01
Molecular Formula:
LaAlO3
Growth Method:
Czochralski
Cystal Structure:
Hexagonal Crystal System
Lattice Constant:
A=5.357A C=13.22 A
Mohs Hardness:
6.5
Density:
6.52g/cm3
Melting Point:
2080°C
Dielectric Constant:
ε=21
Coefficient Of Thermalexpansion:
10x10-6/K
TanS Loss:
~3x10-4@300K,~0.6x10-4@77K
Delivery Time:
5-6weeks
Payment Terms:
T/T, Western Union,MoneyGram,Paypal
Highlight:

LaAlO3 single crystal substrate

,

Lanthanum aluminate substrate for superconductors

,

High-temperature superconducting thin film substrate

Product Description

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

 

Lanthanum aluminum oxide (LaAlO3) is a high-temperature superconducting single-crystal substrate material. It is an excellent substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its superior dielectric properties make it suitable for the fabrication of low-loss microwave amplifiers and dielectric resonant devices.

Size Φ76.2mm
Thickness 0.5mm or customer customization
Polishing Double or single throwing
Crystal optics <100>,<110>,<111>
Surface Roughness Ra Ra≤1nm
Crystalline precision ±0.2°
Positioning edge accuracy 2° (customizable within 1°)

Lanthanum aluminate (LaAlO3) single crystal is a kind of industrial, large-size HTS thin film substrate single crystal material. LaAlO3 crystal matches well with many kinds of perovskite structure materials, and is the substrate material for epitaxial growth of high temperature superconducting films and giant magnetoresistance films. At the same time, lanthanum aluminum crystals have a low dielectric constant and good microwave dielectric performance, so they are suitable for low-loss microwave amplifier devices and dielectric resonance applications.

 

Main characteristics:

Low dielectric loss

The lattice matches well

Small coefficient of thermal expansion

Good chemical stability

Good thermal stability

Typical applications:

High-temperature superconducting thin film extension substrate

Giant magnetic film outer lining

Microwave amplification and dielectric resonance