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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
Home ProductsLaAlO3 Wafer

Orientation 100 Single LaAlO3 Wafer Substrate For Microwave

China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
China ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. certification
Fast Delivery and Quality looks good,will test soon.Thanks!

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Orientation 100 Single LaAlO3 Wafer Substrate For Microwave

Orientation 100 Single LaAlO3 Wafer Substrate For Microwave
Orientation 100 Single LaAlO3 Wafer Substrate For Microwave Orientation 100 Single LaAlO3 Wafer Substrate For Microwave

Large Image :  Orientation 100 Single LaAlO3 Wafer Substrate For Microwave

Product Details:
Place of Origin: China
Brand Name: Crystro
Certification: SGS
Model Number: CR210122-05
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: Negotiable
Packaging Details: Carton Package
Delivery Time: 3-4 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Supply Ability: 1000pcs/month
Detailed Product Description
Material: Orientation <100> Single LaAlO3 Crystal Wafer Orientation: <100>
Redirection Precision: ±0.2° Appearance: Transparent To Brown
Surface Polish: 1sp,2sp Characteristics: For Microwave Electron Device
Growth Method: Czochralski Method Dielectric Constant: ~25
Highlight:

Single LaAlO3 Wafer

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Orientation LaAlO3 Wafer

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Orientation LaAlO3 Substrate

Orientation <100> Single LaAlO3 Crystal Wafer

 

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

 

Main Properties:

 

Major Parameters
Crystal structure M6(normal temperature) M3(>435℃)
Unit cell constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melt point() 2080
Density 6.52(g/cm3)
Hardness 6-6.5(mohs)
Thermal expansion 9.4x10-6/℃
Dielectric constants ε=21
Secant loss(10ghz) ~3×10-4@300k,~0.6×10-4@77k
Color and appearance To anneal and conditions differ from brown to brownish
Chemical stability Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
Characteristics For microwave electron device
Growth method Czochralski method
Size Size upon request, the biggest diameter 3 inches
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation <100> <110> <111>
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack

Class 100 clean bag,class 1000 clean bag

 

 

Our Company:

 

Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability.

 

Contact Details
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Contact Person: Ms. Wu

Tel: 86-18405657612

Fax: 86-0551-63840588

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