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| Material: | SGGG | Flatness: | <1/10 Wave At 633nm |
|---|---|---|---|
| Name: | Subsituted Gadolinium Gallium Garnet SGGG | Crystal Growth Method: | Czochralski |
| Orientation: | (100), (111) +/-0.5° | Type: | Cubic/Round |
| Diameter Tolerance: | ±0.05mm | Length Tolerance: | ±0.2mm |
| High Light: | SGGG Single Crystal,SGGG Substrate,Cubic SGGG Single Crystal |
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SGGG Substrate, Subsituted Gadolinium Gallium Garnet Substrates for YIG BIG
SGGG single crystal, substituted gadolinium gallium garnet is grown by Czochralski method . SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films,is good material for YIG,BiYIG,GdBIG.
| Composition | (Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12 |
| Crystal Structure | Cubic: a =12.480 Å , |
| Molecular wDielectric constanteight | 968,096 |
| Melt Point | ~1730 oC |
| Density | ~ 7.09 g/cm3 |
| Hardness | ~ 7.5 ( mohns) |
| Refractive index | 1.95 |
| Dielectric constant | 30 |
| Dielectric loss tangent (10 GHz) | ca. 3.0 * 10_4 |
| Crystal growth method | Czochralski |
| Crystal growth direction | <111> |
CRYSTRO supply GGG crystal with:
| Orientation | <111> <100> within ±15 arc min |
| Wave Front Distortion | <1/4 wave@632 |
| Diameter Tolerance | ±0.05mm |
| Length Tolerance | ±0.2mm |
| Chamfer | 0.10mm@45º |
| Flatness | <1/10 wave at 633nm |
| Parallelism | < 30 arc Seconds |
| Perpendicularity | < 15 arc min |
| Surface Quality | 10/5 Scratch/Dig |
| Clear Apereture | >90% |
| Large Dimensions of Crystals | 2.8-76 mm in diameter |
