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Product Details:
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| Material: | 4inch Diameter 500µm Thick GSGG Substrates | Diameter: | 4inch |
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| Thick: | 500µm | Crystal Growth Method: | Czochralski |
| Orientation: | (100), (111) | Maximum Size: | 4 Inch Diameter |
| Lattice Constant: | 12.497A | Density: | 7.09g/cm3 |
| High Light: | 500µm Gadolinium gallium garnet,4 inch Gadolinium gallium garnet,4 inch ggg substrates |
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4inch Diameter 500µm Thick GSGG Substrates
Gadolinium gallium garnet(GGG) is a special substrate magneto optical flims. In optical commuication equipment, a large number of 1.3 and 1.5 micron optical isolators are needed, and the core component is YIG or BIG film placed in the magnetic field. Different tangential GGG single crystal substrates can be matched with the lattice of such magneto-optical materials, thus ensuring the successful epitaxial growth of YIG and BIG films. The good physical, mechanical and chemical stability of GGG also ensures the requirements of the substrate in the process of film perparation. The substrate material is made of microwave isolator GGG.
| Crystal properties | ||
| Crystal growth method | Czochralski | |
| Crystal growth orientation | (100), (111) | |
| Maximum size | 3 inch diameter | |
| Variations | Dopands on request | |
| Crystallographic properties | ||
| Crystallographic structure | Cubic | |
| a = 12.383 Å | ||
| a = 12.505 Å SGGG | ||
| Mineralogical | Garnet | |
| Twinning structure | Perfect | |
| Colour | Colourless / Brownish SGGG | |
| Physical properties | ||
| Density | 7.09 g/cm3 | |
| Melting point | 1730 °C | |
| Hardness | 7.5 (Mohs) | |
| Dielectric constant | 30 | |
| Dielectric loss tangent (10 GHz) | ca. 3.0 * 10_4 | |
| Optical properties | ||
| Transmission range | 0.3 to 7.0 mm | |
| Refraction index: | nd = 1.9708 at 577 nm | |
Application:
CRYSTRO supply GGG crystal with:
| Orientation | <111> <100> within ±15 arc min |
| Wave Front Distortion | <1/4 wave@632 |
| Diameter Tolerance | ±0.05mm |
| Length Tolerance | ±0.2mm |
| Chamfer | 0.10mm@45º |
| Flatness | <1/10 wave at 633nm |
| Parallelism | < 30 arc Seconds |
| Perpendicularity | < 15 arc min |
| Surface Quality | 10/5 Scratch/Dig |
| Clear Apereture | >90% |
| Large Dimensions of Crystals | 2.8-76 mm in diameter |
Contact Person: Ms. Wu
Tel: 86-18405657612
Fax: 86-0551-63840588
