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Material: | Laser Part GAGG Doped Ce Scintillation Detector For Medical Imaging | Chemical Formular: | Gd3Al2Ga3O12 |
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Growth Method: | Czocharalski | Density: | 6.63g/cm3 |
Mohs Hardmess: | 8 | Melting Point: | 1850℃ |
Orientation Tolerance: | <0.5° | Size Tolerance: | ±0.05mm |
Paralle: | 10‘’ | Perpendicular: | 5’ |
Surface Quality: | 10/5 | Clear Aperture: | >90% |
Charmfer: | <0.2x45° | Max Dia: | D60-76.2 Mm |
Application: | PET,SPECT,CT.. | ||
High Light: | Doped Ce gagg scintillator,Medical Imaging yag scintillator,Medical Imaging gagg scintillator |
Laser Part GAGG Doped Ce Scintillation Detector For Medical Imaging
GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and compton electron detection. Cerium doped GAGG have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 520 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors.
Ce: GAGG crystal (chemical formula Ce: Gd3Al2Ga3O12, also known as cerium-doped gadolinium aluminum gallium garnet crystal) is a scintillation crystal with excellent comprehensive performance, which is widely used in scientific research and industrial high-energy ray detection. Ce: The effective atomic number of the GAGG crystal is as high as 54.4, and the peak wavelength of the emission spectrum located at 520nm, which matches well with the sensitive wavelength range of the photomultiplier tube (PMT) and silicon photodiode (PD).
Anhui Crystro participate in the kinds exhibitions every year: Laser World of Photonics Munich, Shanghai, Photonics West in San Francisco, CIOE in Shenzhen, etc.
Main Advantages:
1. Relatively bright – emitting >50,000 photons/MeV
2. Good absorbers with good stopping powers - density 6.63 g/cm³
3. Broadly emitting with a 540nm peak
4. Good Energy resolution
Main Applications:
γ-ray detection
X-ray medical imaging
Nuclear physics
Nuclear radiation detection
PET
Main Properties:
Properties | Units |
Wavelength (Max. Emission) | 520 nm |
Wavelength Range | 475 - 800 nm |
Decay Time | 50 - 150 ns |
Light Yield | 40 - 60 photons/keV |
Refractive Index | 1.9 @540nm |
Density | 6.63 g/cm³ |
Atomic Number (Effective) | 54.4 |
Melting Point | 1850 ºC |
Thermal Expansion Coeff. | TBA x 10‾⁶ C⁻¹ |
Hardness | 8 Mhos |
Property | Ce:GAGG |
Chemical composition | Gd3AlxGa5-xO12 |
Symmetry | Cubic |
Structure | Ia3d |
Mohs Hardness | 8 |
Density(g/cm3) | 6.63 |
Refractive index(λ=550nm) | 1.9 |
Emission peak (nm) | 540 |
Light yield (Photons•Mev-1) | >50000 |
Decay time(ns) | 90 |
Energy resolution | <6% |
Zeff | 54 |
Contact Person: Ms. Wu
Tel: 86-18405657612
Fax: 86-0551-63840588