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| Brand Name: | Crystro |
| Model Number: | CR210528-01 |
| MOQ: | 1pc |
| Price: | USD 20-200/pc |
| Delivery Time: | 4-5 weeks |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
High Light Emission Efficiencyht yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer
GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and compton electron detection. Cerium doped GAGG have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 520 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors.
High density
High light yield
Fast decay time
Chemically inert
High sensitivity
High energy resolution
Main Advantages:
Main Applications:
Main Properties:
| Chemical Formula | Gd₃Al₂Ga₃O₁₂ |
| Atomic Number (Effective) | 54.4 |
| Growth Method | Czochralski |
| Density | 6.63g/cm3 |
| Mohs Hardness | 8 |
| Melting Point | 1850℃ |
| Thermal Expansion Coeff. | TBA x 10‾⁶ |
Specifications:
| Chamfer | <0.2×45° |
| Orientation Tolerance | < 0.5° |
| Thickness/Diameter Tolerance | ±0.05 mm |
| Clear Aperture | >90% |
| Wavefront Distortion | dia 70mm |
| Surface Quality | 10/5 (Scratch/Dig) |
| Parallel | 10″ |
| Perpendicular | 5′ |
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|
| Brand Name: | Crystro |
| Model Number: | CR210528-01 |
| MOQ: | 1pc |
| Price: | USD 20-200/pc |
| Packaging Details: | Transparent clean box |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
High Light Emission Efficiencyht yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer
GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and compton electron detection. Cerium doped GAGG have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 520 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors.
High density
High light yield
Fast decay time
Chemically inert
High sensitivity
High energy resolution
Main Advantages:
Main Applications:
Main Properties:
| Chemical Formula | Gd₃Al₂Ga₃O₁₂ |
| Atomic Number (Effective) | 54.4 |
| Growth Method | Czochralski |
| Density | 6.63g/cm3 |
| Mohs Hardness | 8 |
| Melting Point | 1850℃ |
| Thermal Expansion Coeff. | TBA x 10‾⁶ |
Specifications:
| Chamfer | <0.2×45° |
| Orientation Tolerance | < 0.5° |
| Thickness/Diameter Tolerance | ±0.05 mm |
| Clear Aperture | >90% |
| Wavefront Distortion | dia 70mm |
| Surface Quality | 10/5 (Scratch/Dig) |
| Parallel | 10″ |
| Perpendicular | 5′ |
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