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| Product: | High Light Emission Efficiencyht Yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer | Chemical Formular: | Gd3Al2Ga3O12 |
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| Density: | 6.63g/cm3 | Size Tolerance: | ±0.05mm |
| Surface Quality: | 10/5 | Clear Aperture: | >90% |
| Charmfer: | <0.2x45° | Application: | PET,SPECT,CT.. |
| High Light: | GAGG Ce Scintilation Crystals,Gd3Al2Ga3O12 Ce Scintilation Crystals,High Light Emission GAGG Ce |
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High Light Emission Efficiencyht yield Gd3Al2Ga3O12:Ce (GAGG:Ce) Crystal Wafer
GAGG(Ce) (Ce:GAGG, Gd3Al2Ga3O12) is new scintillator for single photon emission computed tomography(SPECT), gamma-ray and compton electron detection. Cerium doped GAGG have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 520 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors.
High density
High light yield
Fast decay time
Chemically inert
High sensitivity
High energy resolution
Main Advantages:
Main Applications:
Main Properties:
| Chemical Formula | Gd₃Al₂Ga₃O₁₂ |
| Atomic Number (Effective) | 54.4 |
| Growth Method | Czochralski |
| Density | 6.63g/cm3 |
| Mohs Hardness | 8 |
| Melting Point | 1850℃ |
| Thermal Expansion Coeff. | TBA x 10‾⁶ |
Specifications:
| Chamfer | <0.2×45° |
| Orientation Tolerance | < 0.5° |
| Thickness/Diameter Tolerance | ±0.05 mm |
| Clear Aperture | >90% |
| Wavefront Distortion | dia 70mm |
| Surface Quality | 10/5 (Scratch/Dig) |
| Parallel | 10″ |
| Perpendicular | 5′ |
Contact Person: Ms. Wu
Tel: 86-18405657612
Fax: 86-0551-63840588
