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Pockels Cell Q Switch
Created with Pixso. Laser System Pockels Cell LGS Q Switch Piezocrystal LGS

Laser System Pockels Cell LGS Q Switch Piezocrystal LGS

Brand Name: Crystal
MOQ: 1pc
Price: USD 20~200/pc
Delivery Time: 4-5 wweeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Packaging Details:
Transparent clean box
Supply Ability:
5000pcs per month
Highlight:

magneto optic modulator

,

pockel cell q switch

,

LGS Q Switch Piezocrystal

Product Description

LGS Series Electro-optic (EO) Q-switch Pockels Cell

 

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

The LGS (LG-EO-Q) series Q-switch (Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP and LiNbO3 series Q-switches.

 

Features:

 

LGS -based Q-switch (Pockels cell);

For wavelengths up to 3.2μm;

Transmitted Wave Front Distortion: < l/4;

Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);

LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.

 

Main Properties:

 

Chemical Formula La3Ga5SiQ14
Crystal Structure Trigonal; a=b=7.453Å,c=6.293Å
Density 5.75 g/cm3
Melting Point 1470 °C
Transparency Range 242 - 3200 nm
Refractive Index 1.89
Electro-Optic Coefficients γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity 1.7×1010 Ω·cm
Deliquescence No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)
 
Good price  online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Pockels Cell Q Switch
Created with Pixso. Laser System Pockels Cell LGS Q Switch Piezocrystal LGS

Laser System Pockels Cell LGS Q Switch Piezocrystal LGS

Brand Name: Crystal
MOQ: 1pc
Price: USD 20~200/pc
Packaging Details: Transparent clean box
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Brand Name:
Crystal
Minimum Order Quantity:
1pc
Price:
USD 20~200/pc
Packaging Details:
Transparent clean box
Delivery Time:
4-5 wweeks
Payment Terms:
T/T, Western Union, MoneyGram, Paypal
Supply Ability:
5000pcs per month
Highlight:

magneto optic modulator

,

pockel cell q switch

,

LGS Q Switch Piezocrystal

Product Description

LGS Series Electro-optic (EO) Q-switch Pockels Cell

 

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

The LGS (LG-EO-Q) series Q-switch (Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP and LiNbO3 series Q-switches.

 

Features:

 

LGS -based Q-switch (Pockels cell);

For wavelengths up to 3.2μm;

Transmitted Wave Front Distortion: < l/4;

Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);

LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.

 

Main Properties:

 

Chemical Formula La3Ga5SiQ14
Crystal Structure Trigonal; a=b=7.453Å,c=6.293Å
Density 5.75 g/cm3
Melting Point 1470 °C
Transparency Range 242 - 3200 nm
Refractive Index 1.89
Electro-Optic Coefficients γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity 1.7×1010 Ω·cm
Deliquescence No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)