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Pockels Cell Q Switch
Created with Pixso. LGS Series Electro - Optic Pockel Cell Q Switch Active NLO Material

LGS Series Electro - Optic Pockel Cell Q Switch Active NLO Material

Brand Name: Crystro
Model Number: CR201209-03
MOQ: 1pc
Price: USD 500-1500/pc
Delivery Time: 4-5 weeks
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Certification:
SGS/COC/ROHS
Material:
LGS
Wavelength:
242-3200nm
Transmitted Wavefront Distortion:
Damage Threshold:
>900MW/cm2(@1064nm,10ns)
Highlight:

pockels cell modulator

,

pockel cell q switch

,

Q Switch Active NLO Material

Product Description

LGS Series Electro-optic (EO) Q-switch Pockels Cell

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

The LGS (LG-EO-Q) series Q-switch (Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP and LiNbO3 series Q-switches.

 

Basic Properties:

Chemical Formula  La3Ga5SiQ14
Crystal Structure  Trigonal; a=b=7.453Å,c=6.293Å
Density  5.75 g/cm3
Melting Point  1470 °C
Transparency Range  242 - 3200 nm
Refractive Index  1.89
Electro-Optic Coefficients  γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity  1.7×1010 Ω·cm
Deliquescence  No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

 

Features:

  • LGS -based Q-switch (Pockels cell);
  • For wavelengths up to 3.2μm;
  • Transmitted Wave Front Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.
Good price  online

Products Details

Created with Pixso. Home Created with Pixso. Products Created with Pixso.
Pockels Cell Q Switch
Created with Pixso. LGS Series Electro - Optic Pockel Cell Q Switch Active NLO Material

LGS Series Electro - Optic Pockel Cell Q Switch Active NLO Material

Brand Name: Crystro
Model Number: CR201209-03
MOQ: 1pc
Price: USD 500-1500/pc
Payment Terms: T/T, Western Union, MoneyGram, Paypal
Detail Information
Place of Origin:
China
Brand Name:
Crystro
Certification:
SGS/COC/ROHS
Model Number:
CR201209-03
Material:
LGS
Wavelength:
242-3200nm
Transmitted Wavefront Distortion:
Damage Threshold:
>900MW/cm2(@1064nm,10ns)
Minimum Order Quantity:
1pc
Price:
USD 500-1500/pc
Delivery Time:
4-5 weeks
Payment Terms:
T/T, Western Union, MoneyGram, Paypal
Highlight:

pockels cell modulator

,

pockel cell q switch

,

Q Switch Active NLO Material

Product Description

LGS Series Electro-optic (EO) Q-switch Pockels Cell

A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.

The LGS (LG-EO-Q) series Q-switch (Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP and LiNbO3 series Q-switches.

 

Basic Properties:

Chemical Formula  La3Ga5SiQ14
Crystal Structure  Trigonal; a=b=7.453Å,c=6.293Å
Density  5.75 g/cm3
Melting Point  1470 °C
Transparency Range  242 - 3200 nm
Refractive Index  1.89
Electro-Optic Coefficients  γ41=1.8 pm/V, γ11=2.3 pm/V
Resistivity  1.7×1010 Ω·cm
Deliquescence  No
Thermal Expansion Coefficients α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

 

Features:

  • LGS -based Q-switch (Pockels cell);
  • For wavelengths up to 3.2μm;
  • Transmitted Wave Front Distortion: < l/4;
  • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
  • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.